sd101aw, sd101bw, sd101cw www.vishay.com vishay semiconductors rev. 1.8, 25-feb-13 1 document number: 85679 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal schottky diodes mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: 18/10k per 13" reel (8 mm tape), 10k/box 08/3k per 7" reel (8 mm tape), 15k/box featrues ? for general purpose applications ? the low forward voltage drop and fast switching make it ideal for prote ction of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications ? the sd101 series is a metal-on-silicon schottky barrier device which is pr otected by a pn junction guardring ? aec-q101 qualified ? base p/n-e3 - rohs-compliant, commercial grade ? base p/n-he3 - rohs-compliant, aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 note (1) valid provided that electrodes are kept at ambient temperature note (1) valid provided that electrodes are kept at ambient temperature parts table part ordering code internal construction type marking remarks sd101aw sd101aw-e3-08 or SD101AW-E3-18 single diode sa tape and reel sd101aw-he3-08 or sd101aw-he3-18 sd101bw sd101bw-e3-08 or sd101bw-e3-18 single diode sb sd101bw-he3-08 or sd101bw-he3-18 sd101cw sd101cw-e3-08 or sd101cw-e3-18 single diode sc sd101cw-he3-08 or sd101cw-he3-18 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit repetitive peak reverse voltage sd101aw v rrm 60 v sd101bw v rrm 50 v sd101cw v rrm 40 v power dissipation (infinite heatsink) (1) p tot 400 mw forward continuous current i f 30 ma maximum single cycle su rge 10 s square wave i fsm 2a thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 300 k/w junction temperature (1) t j 125 c storage temperature range t stg - 65 to + 150 c operating ttemperature range t op - 55 to + 125 c
sd101aw, sd101bw, sd101cw www.vishay.com vishay semiconductors rev. 1.8, 25-feb-13 2 document number: 85679 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - typical variation of forward current vs. forward voltage fig. 2 - typical forw ard conduction curve fig. 3 - typical variation of reverse current at various temperatures fig. 4 - typical capacitance curve as a function of reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit reverse breakdown voltage i r = 10 a sd101aw v (br) 60 v sd101bw v (br) 50 v sd101cw v (br) 40 v leakage current v r = 50 v sd101aw i r 200 na v r = 40 v sd101bw i r 200 na v r = 30 v sd101cw i r 200 na forward voltage drop i f = 1 ma sd101aw v f 410 mv sd101bw v f 400 mv sd101cw v f 390 mv i f = 15 ma sd101aw v f 1000 mv sd101bw v f 950 mv sd101cw v f 900 mv diode capacitance v r = 0 v, f = 1 mhz sd101aw c d 2pf sd101bw c d 2.1 pf sd101cw c d 2.2 pf reverse recovery time i f = i r = 5 ma, recover to 0.1 i r t rr 1ns 0.01 0.1 1 10 0 0.4 0.6 0.8 1.0 0.2 a b c i - forward current (ma) f v f - forward voltage (v) 18477 a b c 0 0.4 0.6 0.8 1.0 0.2 60 20 80 40 0 100 i - forward current (ma) f v f - forward voltage (v) 18478 100 10 1 0.1 0.01 10 20 30 40 050 75 c 50 c 25 c 125 c 100 c v r - reverse voltage (v) i - reverse current (a) r 18479 18480 10 20 30 40 0 0 1.0 1.2 1.4 1.6 1.8 2.0 0.6 0.8 0.2 0.4 50 t j = 25 c c b a c - typical capacitance (pf) d v r - reverse voltage (v)
sd101aw, sd101bw, sd101cw www.vishay.com vishay semiconductors rev. 1.8, 25-feb-13 3 document number: 85679 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-123 0.1 (0.004) max. 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mounting pad layout 2.5 (0.098) 0.85 (0.033) 0.85 (0.033) 0.85 (0.033) cathode bar 0.65 (0.026) 0.45 (0.018) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.008) 0 to 8 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. rev. 4 - date: 24. sep. 2009 document no.: s8-v-3910.01-001 (4) 17432
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